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| DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 04 Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION Silicon NPN transistor in a plastic SOT323 (S-mini) package. The BFS17W uses the same crystal as the SOT23 version, BFS17. PINNING handbook, 2 columns BFS17W PIN 1 2 3 base DESCRIPTION emitter collector 1 Top view Marking code: E1 3 2 MBC870 Fig.1 SOT323 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT Cc Cre Tj Note 1. Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts = 118 C; note 1 open emitter open base open collector CONDITIONS - - - - - -65 - MIN. MAX. 25 15 2.5 50 300 +150 175 UNIT V V V mA mW C C PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency collector capacitance feedback capacitance junction temperature up to Ts = 118 C; note 1 IC = 2 mA; VCE = 1 V IC = 25 mA; VCE = 5 V IE = 0; VCB = 10 V; f = 1 MHz IC = 1 mA; VCE = 5 V; f = 1 MHz CONDITIONS - - - - 25 - - - - MIN. - - - - 90 1.6 0.8 0.75 - TYP. MAX. 25 15 50 300 - - 1.5 - 175 GHz pF pF C UNIT V V mA mW 1995 Sep 04 2 Philips Semiconductors Product specification NPN 1 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C (unless otherwise specified). SYMBOL ICBO hFE fT Cc Ce Cre F PARAMETER collector cut-off current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance noise figure CONDITIONS IE = 0; VCB = 10 V IC = 2 mA; VCE = 1 V IC = 25 mA; VCE = 5 V; f = 500 MHz IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IB = ib = 0; VCE = 5 V; f = 1 MHz; Tamb = 25 C IC = 2 mA; VCE = 5 V; f = 500 MHz; S = opt - 25 - - - - - MIN. - 90 1.6 0.8 2 0.75 4.5 TYP. - - 1.5 - - - PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 118 C; note 1 BFS17W VALUE 190 UNIT K/W MAX. 10 UNIT nA GHz pF pF pF dB handbook, halfpage 400 MLB587 MBG237 handbook, halfpage 60 P tot (mW) 300 hFE 40 200 20 100 0 0 50 100 150 200 T s ( o C) 0 10-1 1 10 IC (mA) 102 VCE = 1 V. Fig.3 Fig.2 Power derating curve. DC current gain as a function of collector current; typical values. 1995 Sep 04 3 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W handbook, halfpage 2 MBG238 handbook, halfpage 2.5 MBG239 Cre (pF) 1.5 fT (GHz) 2 VCE = 10 V 5V 1.5 1 0.5 0 0 2 4 6 8 10 VCB (V) 1 1 10 IC (mA) 102 IB = ib = 0; f = 1 MHz. Tamb = 25 C; f = 500 MHz. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 Transition frequency as a function of collector current; typical values. handbook, halfpage 20 MBG240 F (dB) 15 10 5 0 10-3 10-2 10-1 1 10 102 103 f (MHz) VCE = 10 V. Fig.6 Minimum noise figure as function of frequency; typical values. 1995 Sep 04 4 Philips Semiconductors Product specification NPN 1 GHz wideband transistor PACKAGE OUTLINE BFS17W handbook, full pagewidth 1.00 max 0.2 M A 0.2 M B 0.4 0.2 A 0.1 max 0.2 3 2.2 2.0 1.35 1.15 1 1.4 1.2 2.2 1.8 2 0.3 0.1 0.25 0.10 B MBC871 Dimensions in mm. Fig.7 SOT323. 1995 Sep 04 5 Philips Semiconductors Product specification NPN 1 GHz wideband transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BFS17W This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 04 6 |
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